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AMD R5316G1609U2K 8GB
Samsung M471A1K43DB1-CWE 8GB

AMD R5316G1609U2K 8GB vs Samsung M471A1K43DB1-CWE 8GB

Overall score
star star star star star
AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Overall score
star star star star star
Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

Differences Specifications Comments

Differences

AMD R5316G1609U2K 8GB Reasons to consider
AMD R5316G1609U2K 8GB
Report a bug
Samsung M471A1K43DB1-CWE 8GB Reasons to consider
Samsung M471A1K43DB1-CWE 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    33 left arrow 73
    Around -121% lower latency
  • Faster reading speed, GB/s
    16.1 left arrow 6.3
    Average value in the tests
  • Faster write speed, GB/s
    13.0 left arrow 5.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 12800
    Around 2 higher bandwidth

Specifications

Complete list of technical specifications
AMD R5316G1609U2K 8GB
Samsung M471A1K43DB1-CWE 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    73 left arrow 33
  • Read speed, GB/s
    6.3 left arrow 16.1
  • Write speed, GB/s
    5.2 left arrow 13.0
  • Memory bandwidth, mbps
    12800 left arrow 25600
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    1309 left arrow 2987

AMD R5316G1609U2K 8GB RAM comparisons

Transcend Information TS1GLK64V3H 8GB
Ramos Technology RMB4GB584CA3-13HC 4GB

Samsung M471A1K43DB1-CWE 8GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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