RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
ASint Technology SSA302G08-EGN1C 4GB
A-DATA Technology AO1P26KC8T1-BXPS 8GB
Compare
ASint Technology SSA302G08-EGN1C 4GB vs A-DATA Technology AO1P26KC8T1-BXPS 8GB
Overall score
ASint Technology SSA302G08-EGN1C 4GB
Overall score
A-DATA Technology AO1P26KC8T1-BXPS 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
ASint Technology SSA302G08-EGN1C 4GB
Report a bug
Below the latency in the PassMark tests, ns
26
85
Around 69% lower latency
Faster reading speed, GB/s
12.6
12
Average value in the tests
Faster write speed, GB/s
9.5
5.4
Average value in the tests
Reasons to consider
A-DATA Technology AO1P26KC8T1-BXPS 8GB
Report a bug
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
ASint Technology SSA302G08-EGN1C 4GB
A-DATA Technology AO1P26KC8T1-BXPS 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
85
Read speed, GB/s
12.6
12.0
Write speed, GB/s
9.5
5.4
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2174
1277
ASint Technology SSA302G08-EGN1C 4GB RAM comparisons
Samsung M471B5273CH0-CH9 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
A-DATA Technology AO1P26KC8T1-BXPS 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
PNY Electronics PNY 2GB
Wilk Elektronik S.A. IRX3200D464L16S/8G 8GB
Samsung M3 78T2953EZ3-CF7 1GB
Crucial Technology BLT8G4D30AETA.K16FE 8GB
ASint Technology SSA302G08-EGN1C 4GB
A-DATA Technology AO1P26KC8T1-BXPS 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Asgard VMA41UF-MEC1U2BQ2 4GB
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT16G4DFD824A.C16FAD 16GB
Kingston 9905702-010.A00G 8GB
V-GEN D4H16GS24A8 16GB
Kingston 9965525-140.A00LF 8GB
Corsair CMK16GX4M2D2666C16 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Crucial Technology CT4G4DFS824A.M8FF 4GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Kingston CBD24D4S7D8MA-16 16GB
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology 8ATF1G64AZ-2G6B1 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Kingston 9965589-033.D00G 8GB
Samsung M3 78T5663RZ3-CF7 2GB
Corsair CMD8GX4M2B3466C18 4GB
Corsair CML16GX3M2A1600C10 8GB
Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB
Samsung M393B2G70BH0-CK0 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N
Report a bug
×
Bug description
Source link