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Avant Technology F6451U64F9333G 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Compare
Avant Technology F6451U64F9333G 4GB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Overall score
Avant Technology F6451U64F9333G 4GB
Overall score
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Avant Technology F6451U64F9333G 4GB
Report a bug
Below the latency in the PassMark tests, ns
27
37
Around 27% lower latency
Reasons to consider
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Report a bug
Faster reading speed, GB/s
16
12.8
Average value in the tests
Faster write speed, GB/s
12.6
6.7
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Avant Technology F6451U64F9333G 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
37
Read speed, GB/s
12.8
16.0
Write speed, GB/s
6.7
12.6
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2045
2808
Avant Technology F6451U64F9333G 4GB RAM comparisons
Samsung F6451U64F9333G 4GB
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Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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Absolute Latency
0 ns
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