Corsair CMY8GX3M2A2666C10 4GB
Micron Technology AFSD416ES1P 16GB

Corsair CMY8GX3M2A2666C10 4GB vs Micron Technology AFSD416ES1P 16GB

Overall score
star star star star star
Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Overall score
star star star star star
Micron Technology AFSD416ES1P 16GB

Micron Technology AFSD416ES1P 16GB

Differences

  • Below the latency in the PassMark tests, ns
    17 left arrow 25
    Around 32% lower latency
  • Faster reading speed, GB/s
    22.8 left arrow 14.5
    Average value in the tests
  • Faster write speed, GB/s
    15.4 left arrow 10.7
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 10600
    Around 1.81 higher bandwidth

Specifications

Complete list of technical specifications
Corsair CMY8GX3M2A2666C10 4GB
Micron Technology AFSD416ES1P 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    17 left arrow 25
  • Read speed, GB/s
    22.8 left arrow 14.5
  • Write speed, GB/s
    15.4 left arrow 10.7
  • Memory bandwidth, mbps
    10600 left arrow 19200
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    3391 left arrow 2620
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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