RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLS4G4D240FSE.8FE 4GB
Compare
Crucial Technology BLE4G3D1608DE1TX0. 4GB vs Crucial Technology BLS4G4D240FSE.8FE 4GB
Overall score
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Overall score
Crucial Technology BLS4G4D240FSE.8FE 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Report a bug
Below the latency in the PassMark tests, ns
34
65
Around 48% lower latency
Faster write speed, GB/s
9.7
8.7
Average value in the tests
Reasons to consider
Crucial Technology BLS4G4D240FSE.8FE 4GB
Report a bug
Faster reading speed, GB/s
17.5
16.2
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLS4G4D240FSE.8FE 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
34
65
Read speed, GB/s
16.2
17.5
Write speed, GB/s
9.7
8.7
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2636
1921
Crucial Technology BLE4G3D1608DE1TX0. 4GB RAM comparisons
Kingston HX316C10F/4 4GB
Corsair CM4X4GF2666Z16K4 4GB
Crucial Technology BLS4G4D240FSE.8FE 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 99U5584-005.A00LF 4GB
Avant Technology J641GU42J5213ND 8GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Micron Technology 36ASF4G72PZ-2G6D1 32GB
Samsung 1600 CL10 Series 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N
AMD AE34G1601U1 4GB
G Skill Intl F4-2400C16-16GFX 16GB
SK Hynix DDR2 800 2G 2GB
G Skill Intl F4-3200C15-16GTZSK 16GB
SK Hynix HMT151R7TFR4C-H9 4GB
Crucial Technology BLS8G4D26BFSE.16FBD2 8GB
Kingston 99U5428-018.A00LF 8GB
Team Group Inc. 16GB
Kingston 99U5474-037.A00LF 4GB
SK Hynix HMA41GR7AFR8N-TF 8GB
Samsung M393B5270CH0-CH9 4GB
DSL Memory D4SH1G081SH26A-C 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Micron Technology 16ATF1G64AZ-2G1A1 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMK16GX4M2B3200C14 8GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Corsair CMN32GX4M2Z3600C18 16GB
Samsung 1600 CL10 Series 8GB
SK Hynix HMA81GU6CJR8N-XN 8GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N
Report a bug
×
Bug description
Source link