RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology CT102464BA160B.M16 8GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Compare
Crucial Technology CT102464BA160B.M16 8GB vs Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Overall score
Crucial Technology CT102464BA160B.M16 8GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Crucial Technology CT102464BA160B.M16 8GB
Report a bug
Below the latency in the PassMark tests, ns
40
71
Around 44% lower latency
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Report a bug
Faster reading speed, GB/s
15.5
12.6
Average value in the tests
Faster write speed, GB/s
8.3
7.8
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Crucial Technology CT102464BA160B.M16 8GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
40
71
Read speed, GB/s
12.6
15.5
Write speed, GB/s
7.8
8.3
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2209
1902
Crucial Technology CT102464BA160B.M16 8GB RAM comparisons
Corsair CMZ16GX3M2A1600C9 8GB
Essencore Limited IM48GU48A32-GIISMZ 8GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5673FH0-CF8 2GB
G Skill Intl F4-3000C15-4GRK 4GB
Kingston 99U5471-020.A00LF 4GB
Essencore Limited KD48GU880-34A170X 8GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Corsair CM4X16GF3200C22S2 16GB
Samsung M378A1G44AB0-CWE 8GB
Samsung M378A1G43DB0-CPB 8GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Patriot Memory (PDP Systems) PSD416G26662 16GB
Corsair CMX4GX3M1A1333C9 4GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Samsung DDR3 8GB 1600MHz 8GB
Ramaxel Technology RMSA3260MB78HAF2400 8GB
Samsung M471B5273DH0-CK0 4GB
Apacer Technology D22.23263S.002 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Hoodisk Electronics Co Ltd GKE160UD102408-2666 16GB
Samsung DDR3 8GB 1600MHz 8GB
Kingston XG9XKG-MIE 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingston 9905624-014.A00G 4GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
G Skill Intl F4-2400C17-8GISM 8GB
Samsung M471B5273DH0-CH9 4GB
G Skill Intl F4-3000C14-16GVRD 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
Report a bug
×
Bug description
Source link