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Crucial Technology CT51264BA160B.C16F 4GB
Samsung 18ASF1G72PDZ-2G1B1 16GB

Crucial Technology CT51264BA160B.C16F 4GB vs Samsung 18ASF1G72PDZ-2G1B1 16GB

Overall score
star star star star star
Crucial Technology CT51264BA160B.C16F 4GB

Crucial Technology CT51264BA160B.C16F 4GB

Overall score
star star star star star
Samsung 18ASF1G72PDZ-2G1B1 16GB

Samsung 18ASF1G72PDZ-2G1B1 16GB

Differences Specifications Comments

Differences

Crucial Technology CT51264BA160B.C16F 4GB Reasons to consider
Crucial Technology CT51264BA160B.C16F 4GB
Report a bug
  • Faster reading speed, GB/s
    14.3 left arrow 9.8
    Average value in the tests
  • Faster write speed, GB/s
    9.4 left arrow 8.6
    Average value in the tests
Samsung 18ASF1G72PDZ-2G1B1 16GB Reasons to consider
Samsung 18ASF1G72PDZ-2G1B1 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    32 left arrow 41
    Around -28% lower latency
  • Higher memory bandwidth, mbps
    17000 left arrow 12800
    Around 1.33 higher bandwidth

Specifications

Complete list of technical specifications
Crucial Technology CT51264BA160B.C16F 4GB
Samsung 18ASF1G72PDZ-2G1B1 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    41 left arrow 32
  • Read speed, GB/s
    14.3 left arrow 9.8
  • Write speed, GB/s
    9.4 left arrow 8.6
  • Memory bandwidth, mbps
    12800 left arrow 17000
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2142 left arrow 2271

Crucial Technology CT51264BA160B.C16F 4GB RAM comparisons

SK Hynix HMT351U6CFR8C-PB 4GB
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Samsung 18ASF1G72PDZ-2G1B1 16GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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