RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F2-5300CL4-1GBSA 1GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Compare
G Skill Intl F2-5300CL4-1GBSA 1GB vs Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Overall score
G Skill Intl F2-5300CL4-1GBSA 1GB
Overall score
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F2-5300CL4-1GBSA 1GB
Report a bug
Below the latency in the PassMark tests, ns
52
73
Around 29% lower latency
Faster reading speed, GB/s
4
15.1
Average value in the tests
Reasons to consider
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Report a bug
Faster write speed, GB/s
7.9
1,479.2
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
G Skill Intl F2-5300CL4-1GBSA 1GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
52
73
Read speed, GB/s
4,226.4
15.1
Write speed, GB/s
1,479.2
7.9
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 4
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
590
1724
G Skill Intl F2-5300CL4-1GBSA 1GB RAM comparisons
G Skill Intl F2-5300PHU1-1GBSA 1GB
Crucial Technology CT8G4DFD824A.C16FHP 8GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB RAM comparisons
TwinMOS 8DHE3MN8-HATP 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F2-5300CL4-1GBSA 1GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Samsung M471B5273EB0-CK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
Corsair CMD8GX3M2A2933C12 4GB
G Skill Intl F4-3466C16-4GVK 4GB
Kingston 99U5458-008.A00LF 4GB
Crucial Technology BL4G24C16U4B.8FB 4GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
A-DATA Technology DDR4 3000 8GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingston 9905734-082.A00G 16GB
Crucial Technology CT51264BA1339.C16F 4GB
Samsung M378A5143DB0-CPB 4GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Crucial Technology BL8G32C16U4R.8FE 8GB
Kingston 99U5584-004.A00LF 4GB
G Skill Intl F4-4133C19-8GTZSWC 8GB
Kingston KHX2133C11D3/4GX 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
Kingston 9905403-174.A00LF 2GB
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16G
AMD R534G1601U1S-UO 4GB
Micron Technology 36ASF2G72LZ-2G1A1 16GB
Kingston KHX2133C11D3/4GX 4GB
Crucial Technology BL8G36C16U4W.M8FE1 8GB
Kingston K531R8-MIN 4GB
A-DATA Technology AO2P24HCST2-BTVS 16GB
Report a bug
×
Bug description
Source link