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G Skill Intl F2-5300CL4-1GBSA 1GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
比较
G Skill Intl F2-5300CL4-1GBSA 1GB vs Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
总分
G Skill Intl F2-5300CL4-1GBSA 1GB
总分
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
差异
规格
评论
差异
需要考虑的原因
G Skill Intl F2-5300CL4-1GBSA 1GB
报告一个错误
低于PassMark测试中的延时,ns
52
73
左右 29% 更低的延时
更快的读取速度,GB/s
4
15.1
测试中的平均数值
需要考虑的原因
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
报告一个错误
更快的写入速度,GB/s
7.9
1,479.2
测试中的平均数值
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
G Skill Intl F2-5300CL4-1GBSA 1GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
52
73
读取速度,GB/s
4,226.4
15.1
写入速度,GB/s
1,479.2
7.9
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 4
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
590
1724
G Skill Intl F2-5300CL4-1GBSA 1GB RAM的比较
G Skill Intl F2-5300PHU1-1GBSA 1GB
Crucial Technology CT8G4DFD824A.C16FHP 8GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB RAM的比较
TwinMOS 8DHE3MN8-HATP 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M3 78T5663RZ3-CE6 2GB
G Skill Intl F4-2933C14-16GFX 16GB
Super Talent STT-WB160CL0901 2GB
Kingston HP26D4U6D8ME-16X 16GB
Crucial Technology CT102464BD160B.M16 8GB
G Skill Intl F4-3200C16-8GTZN 8GB
SK Hynix HYMP112U64CP8-S5 1GB
Gloway International Co. Ltd. TYA4U2666D19081C 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
G Skill Intl F4-3200C16-8GTZRX 8GB
SK Hynix HMT451S6BFR8A-PB 4GB
Hewlett-Packard 7EH67AA# 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston ACR32D4U2S8ME-16 16GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Crucial Technology BLS16G4D240FSE.16FD 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Corsair CMU32GX4M4C3000C15 8GB
Samsung 1600 CL10 Series 8GB
Corsair CM4X8GD3200C16K2E 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 18ASF1G72PZ-2G1AV 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-4266C19-8GTRG 8GB
Crucial Technology CT51264BD1339.M16F 4GB
DSL Memory D4SS12081SH21A-A 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BL8G26C16U4R.8FD 8GB
报告一个错误
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Bug description
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