Samsung 1600 CL10 Series 8GB vs Corsair CM4X8GD3200C16K2E 8GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Corsair CM4X8GD3200C16K2E 8GB

Corsair CM4X8GD3200C16K2E 8GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 33

左右 24% 更低的延时

Corsair CM4X8GD3200C16K2E 8GB

需要考虑的原因
Corsair CM4X8GD3200C16K2E 8GB

报告一个错误

更快的读取速度，GB/s

19.6 16.1

测试中的平均数值
更快的写入速度，GB/s

14.2 10.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Corsair CM4X8GD3200C16K2E 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 33
读取速度，GB/s

16.1 19.6
写入速度，GB/s

10.1 14.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2764 3374

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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Samsung 1600 CL10 Series 8GB

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Corsair CM4X8GD3200C16K2E 8GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Samsung M471B5273DH0-CH9 4GB

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Kingston KHX1600C9D3/8G 8GB

Kingston 9905744-011.A00G 32GB

Kingston 9905744-011.A00G 32GB

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Kingston KVR533D2N4 512MB

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Corsair CMK16GX4M2A2666C18 8GB

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Corsair CM2X1024-8500C5D 1GB

Micron Technology 36ASF4G72PZ-2G3B1 32GB

Micron Technology 36ASF4G72PZ-2G3B1 32GB