RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F3-10600CL9-2GBNT 2GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Compare
G Skill Intl F3-10600CL9-2GBNT 2GB vs Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Overall score
G Skill Intl F3-10600CL9-2GBNT 2GB
Overall score
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F3-10600CL9-2GBNT 2GB
Report a bug
Below the latency in the PassMark tests, ns
26
32
Around 19% lower latency
Reasons to consider
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Report a bug
Faster reading speed, GB/s
19.4
13.2
Average value in the tests
Faster write speed, GB/s
16.3
8.4
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
G Skill Intl F3-10600CL9-2GBNT 2GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
32
Read speed, GB/s
13.2
19.4
Write speed, GB/s
8.4
16.3
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2070
3726
G Skill Intl F3-10600CL9-2GBNT 2GB RAM comparisons
A-DATA Technology DDR3L 1600G 4GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-10600CL9-2GBNT 2GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 1
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLS8G4S240FSD.16FBD2 8GB
PNY Electronics PNY 2GB
Essencore Limited IM48GU48A30-GIIHM 8GB
Samsung M378B5173BH0-CH9 4GB
Corsair CMK32GX4M4C3400C16 8GB
Samsung M3 78T2863EHS-CF7 1GB
INTENSO M418039 8GB
Kingston 9905403-038.A00LF 4GB
Patriot Memory (PDP Systems) 2400 C14 Series 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
SK Hynix HMAA1GS6CJR6N-XN 8GB
Kingston 99U5471-012.A00LF 4GB
A-DATA Technology AO2P32NCSV1-BEVS 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-3000C15-8GRKB 8GB
A-DATA Technology DDR3 1600 4GB
Essencore Limited KD4AGS88A-26N1600 16GB
Kingston 9965525-140.A00LF 8GB
Micron Technology 18ASF1G72PDZ-2G3B1 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Kingston 9905678-156.A00G 8GB
Kingston 9965525-018.A00LF 4GB
Corsair CMD32GX4M4A2400C12 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Crucial Technology CT16G4SFD8266.C16FN 16GB
Report a bug
×
Bug description
Source link