RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F3-10600CL9-2GBNT 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB
Compare
G Skill Intl F3-10600CL9-2GBNT 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB
Overall score
G Skill Intl F3-10600CL9-2GBNT 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F3-10600CL9-2GBNT 2GB
Report a bug
Below the latency in the PassMark tests, ns
26
30
Around 13% lower latency
Faster reading speed, GB/s
13.2
10
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB
Report a bug
Faster write speed, GB/s
8.5
8.4
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
G Skill Intl F3-10600CL9-2GBNT 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
30
Read speed, GB/s
13.2
10.0
Write speed, GB/s
8.4
8.5
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2070
2234
G Skill Intl F3-10600CL9-2GBNT 2GB RAM comparisons
A-DATA Technology DDR3L 1600G 4GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB RAM comparisons
Corsair CML16GX3M2A1600C10 8GB
Kingston 9905402-665.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-10600CL9-2GBNT 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CMR64GX4M8C3000C15 8GB
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-2400C16-16GRS 16GB
Samsung M378B5673EH1-CF8 2GB
A-DATA Technology AM1P24HC4R1-BUNS 4GB
Kingston 99U5474-023.A00LF 4GB
Kingston HP24D4S7S8MBP-8 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMK4GX4M1A2400C14 4GB
Samsung M393B2G70BH0-YK0 16GB
Apacer Technology 78.C2GFP.C700B 8GB
Samsung M471B5673FH0-CF8 2GB
Team Group Inc. TEAMGROUP-UD4-4000 4GB
Samsung M386B4G70DM0-CMA4 32GB
Crucial Technology CT8G4DFS824A.C8FE 8GB
Kingston KVR800D2N6/2G 2GB
Kingston 9905598-040.A00G 16GB
Kingston 99U5474-038.A00LF 4GB
SK Hynix HMA82GS6DJR8N-WM 16GB
Samsung M393B1K70CH0-CH9 8GB
Patriot Memory (PDP Systems) 2666 C18 Series 16GB
Samsung M393B5170FH0-CK0 4GB
Panram International Corporation PUD42133C158G2VS 8GB
Samsung M378B5173BH0-CH9 4GB
G Skill Intl F4-3000C16-8GISB 8GB
Report a bug
×
Bug description
Source link