RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hexon Technology Pte Ltd HEXON 1GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Compare
Hexon Technology Pte Ltd HEXON 1GB vs Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Overall score
Hexon Technology Pte Ltd HEXON 1GB
Overall score
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hexon Technology Pte Ltd HEXON 1GB
Report a bug
Faster reading speed, GB/s
3
19.4
Average value in the tests
Reasons to consider
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Report a bug
Below the latency in the PassMark tests, ns
32
62
Around -94% lower latency
Faster write speed, GB/s
16.3
1,843.6
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Hexon Technology Pte Ltd HEXON 1GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
62
32
Read speed, GB/s
3,556.6
19.4
Write speed, GB/s
1,843.6
16.3
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
542
3726
Hexon Technology Pte Ltd HEXON 1GB RAM comparisons
SpecTek Incorporated CONQUR6672GB-A023- 2GB
Qimonda 72T512220EP3SC2 4GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F4-2400C17-8GDBVR 8GB
Kingston 9965525-140.A00LF 8GB
Kingmax Semiconductor GSAH22F-18---------- 16GB
Samsung M471B1G73DB0-YK0 8GB
G Skill Intl F4-2666C18-8GRS 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Corsair CMR16GX4M2C3600C18 8GB
Hexon Technology Pte Ltd HEXON 1GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 1
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3600C18-8GTZN 8GB
Samsung M378B5673FH0-CH9 2GB
Kingston 9905678-138.A00G 8GB
Unifosa Corporation HU564404EP0200 4GB
Kingston 9905701-131.A00G 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB
Kingston KVR16N11/8-SP 8GB
Samsung M386A8K40BM1-CRC 64GB
SK Hynix HMT41GU7BFR8A-PB 8GB
G Skill Intl F4-2400C16-16GFXR 16GB
AMD R534G1601U1S-UO 4GB
AMD R748G2133U2S 8GB
SK Hynix HMT325S6CFR8C-PB 2GB
Corsair CMD64GX4M4B3000C15 16GB
SK Hynix HYMP112U64CP8-S5 1GB
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
Report a bug
×
Bug description
Source link