RAM comparison Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB vs Chun Well Technology Holding Limited MD4U1632161DCW 16GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB vs Chun Well Technology Holding Limited MD4U1632161DCW 16GB

Overall score

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Overall score

Differences Specifications Comments

Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Reasons to consider
Chun Well Technology Holding Limited MD4U1632161DCW 16GB

Below the latency in the PassMark tests, ns

31 35

Around -13% lower latency
Faster reading speed, GB/s

15.7 9.8

Average value in the tests
Faster write speed, GB/s

13.3 7.9

Average value in the tests
Higher memory bandwidth, mbps

21300 17000

Around 1.25 higher bandwidth

Complete list of technical specifications

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Chun Well Technology Holding Limited MD4U1632161DCW 16GB

Main characteristics

Other

Description

PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)

2126 3318

RAM Latency Calculator

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RAM 1

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Absolute Latency

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RAM 2

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