RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Micron Technology M471A1K43CB1-CTD 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs Micron Technology M471A1K43CB1-CTD 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Overall score
Micron Technology M471A1K43CB1-CTD 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
38
Around 26% lower latency
Reasons to consider
Micron Technology M471A1K43CB1-CTD 8GB
Report a bug
Faster reading speed, GB/s
14.8
12.4
Average value in the tests
Faster write speed, GB/s
12.6
9.6
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Micron Technology M471A1K43CB1-CTD 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
38
Read speed, GB/s
12.4
14.8
Write speed, GB/s
9.6
12.6
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2329
2825
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM comparisons
Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
Micron Technology M471A1K43CB1-CTD 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology NT2GT64U8HD0BN-AD 2GB
G Skill Intl F4-2800C14-16GTZ 16GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 8ATF1G64AZ-2G6D1 8GB
Kingston KVR800D2N6/2G 2GB
SK Hynix HMA81GU6AFR8N-UH 8GB
Corsair CMX8GX3M2A2000C9 4GB
Kingston HP26D4S9S8ME-8 8GB
SK Hynix DDR2 800 2G 2GB
Crucial Technology BLS4G4D26BFSE.8FD2 4GB
A-DATA Technology DQKD1A08 1GB
Micron Technology 16ATF2G64HZ-2G6H1 16GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Kingston KHX3333C16D4/16GX 16GB
Kingston KHX1600C9S3L/8G 8GB
Crucial Technology CT8G4DFS632A.M4FE 8GB
Samsung M378B5673EH1-CF8 2GB
Corsair CMK8GX4M2B3600C18 4GB
Kingston 9965662-016.A00G 16GB
Crucial Technology CT8G4SFS824A.M8FE 8GB
Corsair CMY8GX3M2A2666C10 4GB
Crucial Technology CT8G4DFS824A.M8FH 8GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Patriot Memory (PDP Systems) 3600 C16 Series 8GB
A-DATA Technology VDQVE1B16 2GB
Corsair CMD32GX4M4C3200C14C 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Samsung 9905599-020.A00G 16GB
Report a bug
×
Bug description
Source link