RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Samsung 18ASF1G72PDZ-2G1B1 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Samsung 18ASF1G72PDZ-2G1B1 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Overall score
Samsung 18ASF1G72PDZ-2G1B1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Report a bug
Below the latency in the PassMark tests, ns
29
32
Around 9% lower latency
Faster reading speed, GB/s
13.4
9.8
Average value in the tests
Faster write speed, GB/s
9.0
8.6
Average value in the tests
Reasons to consider
Samsung 18ASF1G72PDZ-2G1B1 16GB
Report a bug
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Samsung 18ASF1G72PDZ-2G1B1 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
29
32
Read speed, GB/s
13.4
9.8
Write speed, GB/s
9.0
8.6
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2423
2271
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB
Samsung 18ASF1G72PDZ-2G1B1 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston K1N7HK-ELC 2GB
Corsair CMR32GX4M4A2666C16 8GB
Kingston KHX1866C9D3/8GX 8GB
Kingston KHYXPX-HYJ 8GB
Swissbit MEU25664D6BC2EP-30 2GB
Samsung M378A2K43EB1-CWE 16GB
Kingston ACR16D3LU1KNG/4G 4GB
G Skill Intl F4-2400C15-8GIS 8GB
G Skill Intl F3-2133C9-4GAB 4GB
Crucial Technology BLS8G4D26BFSB.16FBD2 8GB
Kingston 99U5584-017.A00LF 4GB
Crucial Technology CT4G4SFS8266.M8FE 4GB
SK Hynix HYMP112U64CP8-S5 1GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N
Samsung M378B5673FH0-CH9 2GB
Crucial Technology BL4G24C16U4B.8FB 4GB
Samsung DDR3 8GB 1600MHz 8GB
Essencore Limited IMA41GU6MFR8N-CF0 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-3000C16-16GSXFB 16GB
Corsair CMZ16GX3M2A1866C9 8GB
G Skill Intl F4-3600C14-16GVK 16GB
Crucial Technology CT16G4DFD8266.M16FJ 16GB
Corsair CMK16GX4M4B3200C15 4GB
Essencore Limited KD48GU88C-26N1600 8GB
V-Color Technology Inc. TC48G24S817 8GB
Crucial Technology CT8G4DFS824A.C8FBD1 8GB
Samsung M378A1K43CB2-CRC 8GB
Report a bug
×
Bug description
Source link