RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Overall score
Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Report a bug
Reasons to consider
Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB
Report a bug
Below the latency in the PassMark tests, ns
35
62
Around -77% lower latency
Faster reading speed, GB/s
13.6
7.4
Average value in the tests
Faster write speed, GB/s
11.6
5.9
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
62
35
Read speed, GB/s
7.4
13.6
Write speed, GB/s
5.9
11.6
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1612
2701
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB RAM comparisons
Samsung M392B2G70DM0-YH9 16GB
Samsung M393B1K70DH0-CH9 8GB
Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 99U5403-036.A00G 4GB
Corsair CMD32GX4M4C3200C14M 8GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Crucial Technology CT16G4DFRA32A.C16FP 16GB
SK Hynix HMT351R7EFR8C-RD 4GB
A-DATA Technology AO1P24HC4R1-BSIS 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMD16GX4M2B2800C14 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair CMK64GX4M4B3466C16 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Samsung M471A5143EB0-CPB 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Kingston KF552C40-16 16GB
G Skill Intl F4-2800C15-8GRBB 8GB
Kingston KHX1600C9D3/8G 8GB
Samsung M471A2K43CBCBCRC 16GB
Kingston 9905403-515.A00LF 8GB
Kingston KTD3KX-HYA 8GB
Peak Electronics 256X64M-67E 2GB
G Skill Intl F4-3733C17-8GTZA 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB
Samsung M471B5273EB0-CK0 4GB
SK Hynix HMA41GR7MFR8N-TFT1 8GB
Report a bug
×
Bug description
Source link