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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Overall score
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Report a bug
Reasons to consider
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
62
Around -121% lower latency
Faster reading speed, GB/s
18.5
7.4
Average value in the tests
Faster write speed, GB/s
15.7
5.9
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
62
28
Read speed, GB/s
7.4
18.5
Write speed, GB/s
5.9
15.7
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10
PC4-17000, 1.2V, CAS Supported: 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1612
3601
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
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