RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Transcend Information JM2400HSB-8G 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Transcend Information JM2400HSB-8G 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Overall score
Transcend Information JM2400HSB-8G 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Report a bug
Reasons to consider
Transcend Information JM2400HSB-8G 8GB
Report a bug
Below the latency in the PassMark tests, ns
27
62
Around -130% lower latency
Faster reading speed, GB/s
13.9
7.4
Average value in the tests
Faster write speed, GB/s
8.8
5.9
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Transcend Information JM2400HSB-8G 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
62
27
Read speed, GB/s
7.4
13.9
Write speed, GB/s
5.9
8.8
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1612
2186
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB RAM comparisons
Samsung M392B2G70DM0-YH9 16GB
Samsung M393B1K70DH0-CH9 8GB
Transcend Information JM2400HSB-8G 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Avant Technology F6451U64F9333G 4GB
G Skill Intl F4-2400C17-8GSXK 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Teikon TMA81GS6AFR8N-UHSC 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-4000C19-16GTZKK 16GB
Essencore Limited KD48GU88C-26N1600 8GB
A Force Manufacturing Ltd. UD-01G64V2133P 8GB
Kingston 9905471-071.A00LF 8GB
Apacer Technology 78.CAGMT.40C0B 8GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Samsung M391A2K43BB1-CPB 16GB
Kingston 99U5469-045.A00LF 4GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Samsung M471B5173DB0-YK0 4GB
G Skill Intl F4-3200C16-8GTZSW 8GB
Kingston 99U5474-010.A00LF 2GB
Kingston KHX3333C16D4/16GX 16GB
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C
Crucial Technology BLE4G4D30AEEA.K8FE 4GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-4000C16-16GTRS 16GB
Samsung M378B5273CH0-CH9 4GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB
Kingston 99U5474-010.A00LF 2GB
Avant Technology J644GU44J1293NF 32GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-3466C16-8GTZ 8GB
Report a bug
×
Bug description
Source link