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Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Micron Technology 18ASF2G72PZ-2G3B1 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB vs Micron Technology 18ASF2G72PZ-2G3B1 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Overall score
Micron Technology 18ASF2G72PZ-2G3B1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Report a bug
Below the latency in the PassMark tests, ns
28
50
Around 44% lower latency
Faster reading speed, GB/s
10.9
10.2
Average value in the tests
Reasons to consider
Micron Technology 18ASF2G72PZ-2G3B1 16GB
Report a bug
Faster write speed, GB/s
7.3
7.1
Average value in the tests
Higher memory bandwidth, mbps
19200
8500
Around 2.26 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Micron Technology 18ASF2G72PZ-2G3B1 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
50
Read speed, GB/s
10.9
10.2
Write speed, GB/s
7.1
7.3
Memory bandwidth, mbps
8500
19200
Other
Description
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1066 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1668
2248
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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Absolute Latency
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