RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Kingston K821PJ-MID 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB vs Kingston K821PJ-MID 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Overall score
Kingston K821PJ-MID 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Report a bug
Below the latency in the PassMark tests, ns
30
41
Around 27% lower latency
Reasons to consider
Kingston K821PJ-MID 16GB
Report a bug
Faster reading speed, GB/s
12.7
8.8
Average value in the tests
Faster write speed, GB/s
10.3
5.6
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Kingston K821PJ-MID 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
30
41
Read speed, GB/s
8.8
12.7
Write speed, GB/s
5.6
10.3
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1344
2338
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB RAM comparisons
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-4000C17-8GTZRB 8GB
Kingston K821PJ-MID 16GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Apacer Technology 78.01GA0.9K5 1GB
Corsair CMW16GX4M2Z4600C18 8GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C
Kingston K821PJ-MID 16GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Kingston KHX4000C19D4/8GX 8GB
A-DATA Technology VDQVE1B16 2GB
Kingston 99U5713-003.A00G 4GB
Samsung 1600 CL10 Series 8GB
Avant Technology J644GU44J9266NF 32GB
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F4-2400C15-16GFXR 16GB
Crucial Technology CT51264AC800.C16FC 4GB
Patriot Memory (PDP Systems) PSD416G21332 16GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
G Skill Intl F4-4133C19-8GTZKWC 8GB
Kingston KVR16N11/8-SP 8GB
Samsung V-GeN D4S16GL26A8TL6 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Kingston 9905624-016.A00G 8GB
TwinMOS 9DNPBNZB-TATP 4GB
Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB
Kingston 99U5474-037.A00LF 4GB
G Skill Intl F4-3600C14-8GTZRA 8GB
Samsung M378B5273CH0-CH9 4GB
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
G Skill Intl F4-4000C18-8GTZKK 8GB
Report a bug
×
Bug description
Source link