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Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB
Corsair CMZ8GX3M2A1600C9 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB vs Corsair CMZ8GX3M2A1600C9 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB
Overall score
Corsair CMZ8GX3M2A1600C9 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB
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Below the latency in the PassMark tests, ns
27
39
Around 31% lower latency
Faster write speed, GB/s
8.9
8.8
Average value in the tests
Higher memory bandwidth, mbps
12800
10600
Around 1.21% higher bandwidth
Reasons to consider
Corsair CMZ8GX3M2A1600C9 4GB
Report a bug
Faster reading speed, GB/s
14.4
13.2
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB
Corsair CMZ8GX3M2A1600C9 4GB
Main characteristics
Memory type
DDR3
DDR3
Latency in PassMark, ns
27
39
Read speed, GB/s
13.2
14.4
Write speed, GB/s
8.9
8.8
Memory bandwidth, mbps
12800
10600
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
Timings / Clock speed
9-9-9-24 / 1600 MHz
7-7-7-20 / 1333 MHz
Ranking PassMark (The more the better)
2245
2340
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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Absolute Latency
0 ns
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