RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB
G Skill Intl F4-4133C19-8GTZRF 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB vs G Skill Intl F4-4133C19-8GTZRF 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB
Overall score
G Skill Intl F4-4133C19-8GTZRF 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB
Report a bug
Below the latency in the PassMark tests, ns
27
32
Around 16% lower latency
Reasons to consider
G Skill Intl F4-4133C19-8GTZRF 8GB
Report a bug
Faster reading speed, GB/s
15.7
13.2
Average value in the tests
Faster write speed, GB/s
13.8
8.9
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB
G Skill Intl F4-4133C19-8GTZRF 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
32
Read speed, GB/s
13.2
15.7
Write speed, GB/s
8.9
13.8
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2245
3098
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB RAM comparisons
Samsung M378B5173QH0-CK0 4GB
G Skill Intl F4-4133C19-8GTZRF 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
takeMS International AG TMS2GB264D082-805G 2GB
Transcend Information JM2666HSB-8G 8GB
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C
G Skill Intl F4-4133C19-8GTZRF 8GB
Samsung M4 70T2953EZ3-CE6 1GB
A-DATA Technology AE4S240038G17-BHYA 8GB
takeMS International AG TMS2GB264D082-805G 2GB
A-DATA Technology DDR4 2800 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
A-DATA Technology AO1P26KCST2-BWWS 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMA81GS6CJR8N-VK 8GB
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology 8ATF1G64HZ-3G2J1 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS16G4D240FSC.16FAD 16GB
SK Hynix HMT451S6BFR8A-PB 4GB
Asgard VMA45UH-MEC1U2AW2 16GB
Samsung M471B1G73EB0-YK0 8GB
Micron Technology 4ATF51264HZ-2G6E3 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Micron Technology 8ATF1G64AZ-2G6E1 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Micron Technology 16ATF4G64HZ-3G2B2 32GB
Corsair CMY8GX3M2A2666C10 4GB
SK Hynix V-GeN D4H4GL30A8TX5 4GB
Kingston ACR256X64D3S1333C9 2GB
Kingston KHX3200C16D4/16GX 16GB
‹
›
Report a bug
×
Bug description
Source link