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Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB
Samsung M378B5173QH0-CK0 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB vs Samsung M378B5173QH0-CK0 4GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB

Overall score
star star star star star
Samsung M378B5173QH0-CK0 4GB

Samsung M378B5173QH0-CK0 4GB

Differences Specifications Comments

Differences

Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    27 left arrow 43
    Around 37% lower latency
  • Faster write speed, GB/s
    8.9 left arrow 8.2
    Average value in the tests
Samsung M378B5173QH0-CK0 4GB Reasons to consider
Samsung M378B5173QH0-CK0 4GB
Report a bug
  • Faster reading speed, GB/s
    13.9 left arrow 13.2
    Average value in the tests

Specifications

Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB
Samsung M378B5173QH0-CK0 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    27 left arrow 43
  • Read speed, GB/s
    13.2 left arrow 13.9
  • Write speed, GB/s
    8.9 left arrow 8.2
  • Memory bandwidth, mbps
    12800 left arrow 12800
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    2245 left arrow 2216

Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB RAM comparisons

G Skill Intl F4-4133C19-8GTZRF 8GB

Samsung M378B5173QH0-CK0 4GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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