RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Overall score
Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Report a bug
Faster reading speed, GB/s
3
15.4
Average value in the tests
Reasons to consider
Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB
Report a bug
Below the latency in the PassMark tests, ns
37
65
Around -76% lower latency
Faster write speed, GB/s
12.5
1,592.0
Average value in the tests
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
65
37
Read speed, GB/s
3,580.8
15.4
Write speed, GB/s
1,592.0
12.5
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
572
3075
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM comparisons
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB RAM comparisons
Kingston 9905403-444.A00LF 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Chun Well Technology Holding Limited CL19-19-19 D4-2666
Peak Electronics 256X64M-67E 2GB
Crucial Technology BL16G32C16S4B.8FB 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Wilk Elektronik S.A. IRH2666D464L19/16G 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Wilk Elektronik S.A. GR2666D464L19/16G 16GB
Samsung M393B1G70BH0-CK0 8GB
Apacer Technology D22.23263S.002 16GB
A-DATA Technology DQVE1908 512MB
Corsair CMD16GX4M2B3200C16 8GB
Kingston 99U5474-010.A00LF 2GB
Crucial Technology BLS16G4D26BFSB.16FD 16GB
Corsair CMV4GX3M1B1600C11 4GB
Kingston KHX2400C15D4/8G 8GB
Kingston KHX2800C14D4/8GX 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N
G Skill Intl F4-3600C14-8GTZN 8GB
Kingston KHX3200C16D4/8GX 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD416G24002S 16GB
SpecTek Incorporated ?????????????????? 2GB
Golden Empire CL15-17-17 D4-3200 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-2133C15-4GNT 4GB
A-DATA Technology DQVE1908 512MB
Corsair CMK32GX4M2K4133C19 16GB
Report a bug
×
Bug description
Source link