RAM comparison Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Micron Technology CT4G4DFS8213.8FA11 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Micron Technology CT4G4DFS8213.8FA11 4GB

Overall score

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Overall score

Differences Specifications Comments

Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Below the latency in the PassMark tests, ns

24 35

Around 31% lower latency
Faster reading speed, GB/s

16 15

Average value in the tests
Faster write speed, GB/s

12.5 12.0

Average value in the tests
Higher memory bandwidth, mbps

19200 17000

Around 1.13% higher bandwidth

Reasons to consider
Micron Technology CT4G4DFS8213.8FA11 4GB

Complete list of technical specifications

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Micron Technology CT4G4DFS8213.8FA11 4GB

Main characteristics

Other

Description

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)

2925 2654

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

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Absolute Latency

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