RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Panram International Corporation PUD42133C154G2VS 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Panram International Corporation PUD42133C154G2VS 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Panram International Corporation PUD42133C154G2VS 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
25
Around 4% lower latency
Faster reading speed, GB/s
16
15.4
Average value in the tests
Faster write speed, GB/s
12.5
11.9
Average value in the tests
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
Panram International Corporation PUD42133C154G2VS 4GB
Report a bug
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Panram International Corporation PUD42133C154G2VS 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
25
Read speed, GB/s
16.0
15.4
Write speed, GB/s
12.5
11.9
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
1870
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Panram International Corporation PUD42133C154G2VS 4GB RAM comparisons
Kingston 99U5403-036.A00G 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Apacer Technology 78.01GA0.9K5 1GB
G Skill Intl F4-2800C15-8GVR 8GB
SK Hynix HMA451U6AFR8N-TF 4GB
Samsung M378A2K43CB1-CTD 16GB
Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C
SK Hynix HMT325U6CFR8C-H9 2GB
Samsung M391B5673EH1-CH9 2GB
Team Group Inc. TEAMGROUP-D4-3733 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BLS4G4S240FSD.8FAR 4GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Corsair CM4X16GE2400Z16K4 16GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-4500C19-8GTZKKE 8GB
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-2133C15-8GRK 8GB
Kingston KVR16N11/8-SP 8GB
Micron Technology 16ATF1G64AZ-2G1A1 8GB
SpecTek Incorporated ?????????????????? 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N
Kingston KHX2400C11D3/4GX 4GB
Corsair CMW32GX4M2D3600C18 16GB
Kingston 9905471-006.A01LF 4GB
Samsung M393A1G43EB1-CRC 8GB
Samsung M471B5173QH0-YK0 4GB
Corsair CMK16GX4M2K3600C19 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Patriot Memory (PDP Systems) 4000 C19 Series 8GB
Report a bug
×
Bug description
Source link