RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Ramaxel Technology RMSA3330MJ78HBF-3200 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Ramaxel Technology RMSA3330MJ78HBF-3200 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Ramaxel Technology RMSA3330MJ78HBF-3200 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
36
Around 33% lower latency
Faster reading speed, GB/s
16
15.9
Average value in the tests
Reasons to consider
Ramaxel Technology RMSA3330MJ78HBF-3200 16GB
Report a bug
Faster write speed, GB/s
14.1
12.5
Average value in the tests
Higher memory bandwidth, mbps
25600
19200
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Ramaxel Technology RMSA3330MJ78HBF-3200 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
36
Read speed, GB/s
16.0
15.9
Write speed, GB/s
12.5
14.1
Memory bandwidth, mbps
19200
25600
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2925
3121
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Ramaxel Technology RMSA3330MJ78HBF-3200 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Ramaxel Technology RMSA3330MJ78HBF-3200 16GB
Corsair CMY8GX3M2A2666C10 4GB
Kingston KHX2933C17S4/32G 32GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Avant Technology W641GU42J9266NC 8GB
Apacer Technology 78.A1GC6.9H10C 2GB
Apacer Technology 78.A1GC6.9L1 2GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Avant Technology J642GU42J5213NF 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4133C19-8GTZC 8GB
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F2-8000CL5-2GBPI 2GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology BLS8G4D26BFSE.16FB 8GB
Samsung M3 78T2863QZS-CF7 1GB
Crucial Technology CT8G4DFS824A.C8FJ 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Kingston KHX4000C19D4/8GX 8GB
PNY Electronics PNY 2GB
A-DATA Technology AM2L16BC8R2-B0XS 8GB
Kingston KVR800D2N6/2G 2GB
G Skill Intl F4-3200C18-8GRS 8GB
Kingston KHX1600C9D3/4GX 4GB
Kingston KHX1600C9D3L/8GX 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
Panram International Corporation PUD42400C154G4NJK 4GB
Report a bug
×
Bug description
Source link