RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
V-Color Technology Inc. TN416G24D817-VHA/R 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs V-Color Technology Inc. TN416G24D817-VHA/R 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
V-Color Technology Inc. TN416G24D817-VHA/R 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
40
Around 40% lower latency
Faster reading speed, GB/s
16
13.7
Average value in the tests
Faster write speed, GB/s
12.5
9.4
Average value in the tests
Reasons to consider
V-Color Technology Inc. TN416G24D817-VHA/R 16GB
Report a bug
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
V-Color Technology Inc. TN416G24D817-VHA/R 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
40
Read speed, GB/s
16.0
13.7
Write speed, GB/s
12.5
9.4
Memory bandwidth, mbps
19200
19200
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2925
2411
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
V-Color Technology Inc. TN416G24D817-VHA/R 16GB RAM comparisons
Corsair CM5S16GM4800A40K2 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
V-Color Technology Inc. TN416G24D817-VHA/R 16GB
G Skill Intl F3-2400C11-8GSR 8GB
Crucial Technology BLS8G4D240FSEK.8FBR 8GB
Samsung M3 78T2863EHS-CF7 1GB
Corsair CMK32GX4M2A2133C13 16GB
SK Hynix HYMP512S64CP8-Y5 1GB
G Skill Intl F4-2800C16-4GVR 4GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Samsung M378A2K43CB1-CTD 16GB
Samsung M378B5673EH1-CF8 2GB
Tanbassh 8G 2666MHZ 8GB
Kingston KHX1600C9S3L/8G 8GB
Kingston 9905744-067.A00G 32GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
G Skill Intl F4-2400C17-4GNT 4GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
G Skill Intl F4-3200C16-8GTZN 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
G Skill Intl F4-4000C16-16GVK 16GB
Samsung M386B4G70DM0-CMA4 32GB
Corsair CMW16GX4M2C3200C14 8GB
SK Hynix HMT31GR7BFR4C-H9 8GB
Corsair CMR32GX4M4C3600C18 8GB
Samsung M378A1K43EB2-CWE 8GB
Kingston 9905744-024.A00G 16GB
Qimonda 72T128420EFA3SB2 1GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600
Report a bug
×
Bug description
Source link