RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
36
Around 33% lower latency
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB
Report a bug
Faster reading speed, GB/s
19.4
16
Average value in the tests
Faster write speed, GB/s
13.9
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
36
Read speed, GB/s
16.0
19.4
Write speed, GB/s
12.5
13.9
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
3351
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB RAM comparisons
AMD AE34G1601U1 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Samsung M471A5244CB0-CRC 4GB
Samsung M3 78T5663RZ3-CE6 2GB
Samsung V-GeN D4S8GL30A8TX5 8GB
Kingston 99U5471-020.A00LF 4GB
Corsair CMW32GX4M4K4266C19 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
Crucial Technology BL8G32C16S4B.8FE 8GB
A-DATA Technology DDR4 2400 16GB
G Skill Intl F4-3200C16-16GTZSW 16GB
A-DATA Technology VDQVE1B16 2GB
Kingston ACR24D4S7S1MB-4 4GB
AMD R534G1601U1S-UO 4GB
Patriot Memory (PDP Systems) PSD416G26662S 16GB
Samsung M471B5673FH0-CF8 2GB
Kingston HX432C15PB3/16 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston 9905678-023.A00G 8GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-4133C19-8GTZSWC 8GB
Kingston 9965525-140.A00LF 8GB
Kingston 9905702-020.A00G 8GB
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR4 2666 8GB
A-DATA Technology DDR4 2400 16GB
Ramaxel Technology RMSA3270ME86H9F-2666 4GB
Report a bug
×
Bug description
Source link