RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kingston 99U5403-036.A00G 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Compare
Kingston 99U5403-036.A00G 4GB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Overall score
Kingston 99U5403-036.A00G 4GB
Overall score
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Kingston 99U5403-036.A00G 4GB
Report a bug
Below the latency in the PassMark tests, ns
25
37
Around 32% lower latency
Reasons to consider
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Report a bug
Faster reading speed, GB/s
16
15.7
Average value in the tests
Faster write speed, GB/s
12.6
9.8
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Kingston 99U5403-036.A00G 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
37
Read speed, GB/s
15.7
16.0
Write speed, GB/s
9.8
12.6
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2388
2808
Kingston 99U5403-036.A00G 4GB RAM comparisons
Kingston 9905403-447.A00LF 4GB
Team Group Inc. 76TT16NUSL2R8-4G 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Ramaxel Technology RMR5040ED58E9W1600 4GB
Samsung M393A5143DB0-CRC 4GB
Samsung M393B2G70BH0-CH9 16GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N
A-DATA Technology VDQVE1B16 2GB
Corsair CMW16GX4M2Z3200C16 8GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-2933C16-16GFX 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Crucial Technology BLS4G4D26BFSB.8FB 4GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Crucial Technology BLE4G4D26AFEA.8FAD 4GB
Samsung M4 70T2953EZ3-CE6 1GB
Crucial Technology CT8G4SFD824A.C16FF 8GB
Samsung M393B1K70CH0-CH9 8GB
Corsair CMW16GX4M2D3600C16 8GB
Kingston ACR512X64D3S13C9G 4GB
Panram International Corporation PUD42133C154G2VS 4GB
Kingston 9905403-437.A01LF 4GB
ISD Technology Limited KD48GU880-32A160X 8GB
Patriot Memory (PDP Systems) PSD22G6672 2GB
G Skill Intl F4-2666C18-8GRS 8GB
Unifosa Corporation HU564404EP0200 4GB
Samsung M378A5143TB2-CTD 4GB
Kingston 9905584-016.A00LF 4GB
Essencore Limited KD48GU880-32A160X 8GB
Kingston 9905403-156.A00LF 2GB
Corsair CMW16GX4M1Z3600C18 16GB
Report a bug
×
Bug description
Source link