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Micron Technology 16JSF25664HZ-1G1F1 2GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Compare
Micron Technology 16JSF25664HZ-1G1F1 2GB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Overall score
Micron Technology 16JSF25664HZ-1G1F1 2GB
Overall score
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 16JSF25664HZ-1G1F1 2GB
Report a bug
Below the latency in the PassMark tests, ns
29
37
Around 22% lower latency
Reasons to consider
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Report a bug
Faster reading speed, GB/s
16
10.5
Average value in the tests
Faster write speed, GB/s
12.6
7.1
Average value in the tests
Higher memory bandwidth, mbps
19200
8500
Around 2.26 higher bandwidth
Specifications
Complete list of technical specifications
Micron Technology 16JSF25664HZ-1G1F1 2GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
29
37
Read speed, GB/s
10.5
16.0
Write speed, GB/s
7.1
12.6
Memory bandwidth, mbps
8500
19200
Other
Description
PC3-8500, 1.5V, CAS Supported: 5 6 7 8
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1066 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1425
2808
Micron Technology 16JSF25664HZ-1G1F1 2GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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