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Micron Technology 16JTF51264AZ-1G4M1 4GB
G Skill Intl F4-3200C16-8GTZKW 8GB

Micron Technology 16JTF51264AZ-1G4M1 4GB vs G Skill Intl F4-3200C16-8GTZKW 8GB

Overall score
star star star star star
Micron Technology 16JTF51264AZ-1G4M1 4GB

Micron Technology 16JTF51264AZ-1G4M1 4GB

Overall score
star star star star star
G Skill Intl F4-3200C16-8GTZKW 8GB

G Skill Intl F4-3200C16-8GTZKW 8GB

Differences Specifications Comments

Differences

Micron Technology 16JTF51264AZ-1G4M1 4GB Reasons to consider
Micron Technology 16JTF51264AZ-1G4M1 4GB
Report a bug
G Skill Intl F4-3200C16-8GTZKW 8GB Reasons to consider
G Skill Intl F4-3200C16-8GTZKW 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    29 left arrow 40
    Around -38% lower latency
  • Faster reading speed, GB/s
    18.5 left arrow 14.2
    Average value in the tests
  • Faster write speed, GB/s
    14.6 left arrow 8.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 10600
    Around 1.6 higher bandwidth

Specifications

Complete list of technical specifications
Micron Technology 16JTF51264AZ-1G4M1 4GB
G Skill Intl F4-3200C16-8GTZKW 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    40 left arrow 29
  • Read speed, GB/s
    14.2 left arrow 18.5
  • Write speed, GB/s
    8.4 left arrow 14.6
  • Memory bandwidth, mbps
    10600 left arrow 17000
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2142 left arrow 3488

Micron Technology 16JTF51264AZ-1G4M1 4GB RAM comparisons

Samsung M378B5173DB0-CK0 4GB
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G Skill Intl F4-3200C16-8GTZKW 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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