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Micron Technology 16JTF51264AZ-1G4M1 4GB
Samsung M378B5173DB0-CK0 4GB

Micron Technology 16JTF51264AZ-1G4M1 4GB vs Samsung M378B5173DB0-CK0 4GB

Overall score
star star star star star
Micron Technology 16JTF51264AZ-1G4M1 4GB

Micron Technology 16JTF51264AZ-1G4M1 4GB

Overall score
star star star star star
Samsung M378B5173DB0-CK0 4GB

Samsung M378B5173DB0-CK0 4GB

Differences Specifications Comments

Differences

Micron Technology 16JTF51264AZ-1G4M1 4GB Reasons to consider
Micron Technology 16JTF51264AZ-1G4M1 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    40 left arrow 42
    Around 5% lower latency
  • Faster reading speed, GB/s
    14.2 left arrow 13.8
    Average value in the tests
  • Faster write speed, GB/s
    8.4 left arrow 8.1
    Average value in the tests
Samsung M378B5173DB0-CK0 4GB Reasons to consider
Samsung M378B5173DB0-CK0 4GB
Report a bug
  • Higher memory bandwidth, mbps
    12800 left arrow 10600
    Around 1.21 higher bandwidth

Specifications

Complete list of technical specifications
Micron Technology 16JTF51264AZ-1G4M1 4GB
Samsung M378B5173DB0-CK0 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    40 left arrow 42
  • Read speed, GB/s
    14.2 left arrow 13.8
  • Write speed, GB/s
    8.4 left arrow 8.1
  • Memory bandwidth, mbps
    10600 left arrow 12800
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    2142 left arrow 2187

Micron Technology 16JTF51264AZ-1G4M1 4GB RAM comparisons

Gold Key Technology Co Ltd NMSO480E85-2666E 8GB

Samsung M378B5173DB0-CK0 4GB RAM comparisons

Crucial Technology BL51264BA160A.16FH 4GB
Samsung M378B5273CH0-CK0 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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