RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 16JTF51264HZ-1G6M1 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB
Compare
Micron Technology 16JTF51264HZ-1G6M1 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB
Overall score
Micron Technology 16JTF51264HZ-1G6M1 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 16JTF51264HZ-1G6M1 4GB
Report a bug
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
28
Around -12% lower latency
Faster reading speed, GB/s
15.3
12.9
Average value in the tests
Faster write speed, GB/s
12.7
9.0
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Micron Technology 16JTF51264HZ-1G6M1 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
25
Read speed, GB/s
12.9
15.3
Write speed, GB/s
9.0
12.7
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2112
2704
Micron Technology 16JTF51264HZ-1G6M1 4GB RAM comparisons
SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 99U5663-007.A00G 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB RAM comparisons
Kingston 99U5428-040.A00LF 4GB
AMD AE34G1601U1 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B1G73DB0-YK0 8GB
Kingston 9965662-016.A00G 16GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N
Corsair CMY16GX3M4A2133C8 4GB
Micron Technology 9ASF1G72AZ-2G3B1 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Corsair CMK16GX4M4A2133C15 4GB
Ramaxel Technology RMT3010EC58E8F1333 2GB
Crucial Technology CT8G4SFS8213.M8FB 8GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Transcend Information JM2400HSB-8G 8GB
Kingston 9965525-140.A00LF 8GB
SK Hynix HMA82GS6DJR8N-VK 16GB
SK Hynix HMT325U6CFR8C-PB 2GB
Transcend Information TS1GLH64V1H 8GB
Kingston 9905471-002.A00LF 2GB
Corsair CMV8GX4M1A2133C15 8GB
Samsung M3 78T2863QZS-CF7 1GB
Corsair CMD16GX4M2B3200C14 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-4000C19-16GTZSW 16GB
Samsung M4 70T2953EZ3-CE6 1GB
Golden Empire CL15-17-17 D4-3000 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Corsair CMD16GX4M2B3200C14 8GB
Report a bug
×
Bug description
Source link