Micron Technology 8ATF1G64AZ-2G3E1 8GB
Samsung M378A1K43CB2-CTD 8GB

Micron Technology 8ATF1G64AZ-2G3E1 8GB vs Samsung M378A1K43CB2-CTD 8GB

Overall score
star star star star star
Micron Technology 8ATF1G64AZ-2G3E1 8GB

Micron Technology 8ATF1G64AZ-2G3E1 8GB

Overall score
star star star star star
Samsung M378A1K43CB2-CTD 8GB

Samsung M378A1K43CB2-CTD 8GB

Differences

  • Below the latency in the PassMark tests, ns
    32 left arrow 35
    Around -9% lower latency
  • Faster reading speed, GB/s
    15.9 left arrow 15.4
    Average value in the tests
  • Faster write speed, GB/s
    12.0 left arrow 11.3
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 19200
    Around 1.11 higher bandwidth

Specifications

Complete list of technical specifications
Micron Technology 8ATF1G64AZ-2G3E1 8GB
Samsung M378A1K43CB2-CTD 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    35 left arrow 32
  • Read speed, GB/s
    15.4 left arrow 15.9
  • Write speed, GB/s
    11.3 left arrow 12.0
  • Memory bandwidth, mbps
    19200 left arrow 21300
Other
  • Description
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2713 left arrow 2952
RAM Latency Calculator
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