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Micron Technology 8ATF1G64AZ-2G3E1 8GB
Samsung M378A1K43CB2-CTD 8GB
Compare
Micron Technology 8ATF1G64AZ-2G3E1 8GB vs Samsung M378A1K43CB2-CTD 8GB
Overall score
Micron Technology 8ATF1G64AZ-2G3E1 8GB
Overall score
Samsung M378A1K43CB2-CTD 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF1G64AZ-2G3E1 8GB
Report a bug
Reasons to consider
Samsung M378A1K43CB2-CTD 8GB
Report a bug
Below the latency in the PassMark tests, ns
32
35
Around -9% lower latency
Faster reading speed, GB/s
15.9
15.4
Average value in the tests
Faster write speed, GB/s
12.0
11.3
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Micron Technology 8ATF1G64AZ-2G3E1 8GB
Samsung M378A1K43CB2-CTD 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
35
32
Read speed, GB/s
15.4
15.9
Write speed, GB/s
11.3
12.0
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2713
2952
Micron Technology 8ATF1G64AZ-2G3E1 8GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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