RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M378A1G43TB1-CTD 8GB
Compare
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Samsung M378A1G43TB1-CTD 8GB
Overall score
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Overall score
Samsung M378A1G43TB1-CTD 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Report a bug
Higher memory bandwidth, mbps
25600
21300
Around 1.2% higher bandwidth
Reasons to consider
Samsung M378A1G43TB1-CTD 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
51
Around -82% lower latency
Faster reading speed, GB/s
16.6
15.6
Average value in the tests
Faster write speed, GB/s
13.7
11.8
Average value in the tests
Specifications
Complete list of technical specifications
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M378A1G43TB1-CTD 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
51
28
Read speed, GB/s
15.6
16.6
Write speed, GB/s
11.8
13.7
Memory bandwidth, mbps
25600
21300
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2687
3007
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M378A1G43TB1-CTD 8GB RAM comparisons
Apacer Technology AQD-D4U8GN24-SE 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M378A1G43TB1-CTD 8GB
G Skill Intl F4-3600C19-16GSXKB 16GB
Crucial Technology CT16G4DFRA266.C8FB 16GB
Kingston KHYXPX-MIE 8GB
Kingston KVR16N11/8-SP 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
G Skill Intl F4-3600C18-32GTZN 32GB
Kingston 9965516-112.A00LF 16GB
G Skill Intl F4-2933C16-8GTZRX 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
Gold Key Technology Co Ltd NMUD480E82-3200E 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston HP32D4U8D8HC-16XR 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Patriot Memory (PDP Systems) PSD48G266681 8GB
takeMS International AG TMS2GB264D083805EV 2GB
Micron Technology 36ADS2G72PZ-2G1A1 16GB
Samsung M393B5170FH0-CK0 4GB
Crucial Technology BLE4G4D32AEEA.K8FD 4GB
Kingston 9905403-444.A00LF 4GB
Hyundai Inc GR26C16S8K2HU416 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston 9905744-006.A00G 16GB
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR4 2666 2OZ 4GB
Corsair CMZ16GX3M2A2400C10 8GB
G Skill Intl F4-4000C19-8GTZ 8GB
Report a bug
×
Bug description
Source link