RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M471A5244BB0-CRC 4GB
Compare
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Samsung M471A5244BB0-CRC 4GB
Overall score
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Overall score
Samsung M471A5244BB0-CRC 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Report a bug
Faster reading speed, GB/s
15.6
14
Average value in the tests
Faster write speed, GB/s
11.8
10.4
Average value in the tests
Higher memory bandwidth, mbps
25600
19200
Around 1.33% higher bandwidth
Reasons to consider
Samsung M471A5244BB0-CRC 4GB
Report a bug
Below the latency in the PassMark tests, ns
38
51
Around -34% lower latency
Specifications
Complete list of technical specifications
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M471A5244BB0-CRC 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
51
38
Read speed, GB/s
15.6
14.0
Write speed, GB/s
11.8
10.4
Memory bandwidth, mbps
25600
19200
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2687
2055
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M471A5244BB0-CRC 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Golden Empire 1GB DDR2 800 CAS=4 1GB
Corsair CMT16GX4M2K4266C19 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M471A5244BB0-CRC 4GB
Samsung M471A5143DB0-CPB 4GB
Kingston ACR21D4S15HAG/8G 8GB
Micron Technology 16ATF4G64HZ-3G2E2 32GB
Samsung M471A1K43DB1-CWE 8GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Samsung M393A4K40BB1-CRC 32GB
Kingston 9905403-174.A00LF 2GB
SK Hynix HMA82GS6MFR8N-TF 16GB
Corsair CMZ16GX3M2A2400C10 8GB
Apacer Technology GD2.1527WC.001 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Crucial Technology BL16G26C16S4B.16FD 16GB
A-DATA Technology DDR4 2666 8GB
Kingston DDR3 1333G 2GB
Kingston 99P5474-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N
A-DATA Technology DDR3 1600 4GB
Crucial Technology BLS4G4D26BFSE.8FD2 4GB
G Skill Intl F5-6400J3239G16G 16GB
Corsair CMT64GX4M4Z3600C18 16GB
Kingston 9905584-016.A00LF 4GB
Kingston 9965600-012.A02G 16GB
Samsung M471A5143EB0-CPB 4GB
Crucial Technology 16G4UD2400.C16BD1 16GB
Report a bug
×
Bug description
Source link