Micron Technology 8JSF25664HZ-1G4D1 2GB
Samsung M471A1K43DB1-CWE 8GB

Micron Technology 8JSF25664HZ-1G4D1 2GB vs Samsung M471A1K43DB1-CWE 8GB

Overall score
star star star star star
Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Overall score
star star star star star
Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

Differences

  • Below the latency in the PassMark tests, ns
    33 left arrow 41
    Around -24% lower latency
  • Faster reading speed, GB/s
    16.1 left arrow 10.7
    Average value in the tests
  • Faster write speed, GB/s
    13.0 left arrow 7.5
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 10600
    Around 2.42 higher bandwidth

Specifications

Complete list of technical specifications
Micron Technology 8JSF25664HZ-1G4D1 2GB
Samsung M471A1K43DB1-CWE 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    41 left arrow 33
  • Read speed, GB/s
    10.7 left arrow 16.1
  • Write speed, GB/s
    7.5 left arrow 13.0
  • Memory bandwidth, mbps
    10600 left arrow 25600
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    1335 left arrow 2987
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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