RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2F4G64CB8HB9N-CG 4GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB
Compare
Nanya Technology M2F4G64CB8HB9N-CG 4GB vs Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB
Overall score
Nanya Technology M2F4G64CB8HB9N-CG 4GB
Overall score
Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology M2F4G64CB8HB9N-CG 4GB
Report a bug
Below the latency in the PassMark tests, ns
24
37
Around 35% lower latency
Reasons to consider
Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB
Report a bug
Faster reading speed, GB/s
16.9
13.2
Average value in the tests
Faster write speed, GB/s
13.8
8.8
Average value in the tests
Higher memory bandwidth, mbps
25600
10600
Around 2.42 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology M2F4G64CB8HB9N-CG 4GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
24
37
Read speed, GB/s
13.2
16.9
Write speed, GB/s
8.8
13.8
Memory bandwidth, mbps
10600
25600
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
Timings / Clock speed
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2301
3170
Nanya Technology M2F4G64CB8HB9N-CG 4GB RAM comparisons
Nanya Technology M2F4G64CB8HD5N-CG 4GB
Kingston 9905678-024.A00G 4GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Kingston 9905702-019.A00G 8GB
Kingston KVR16N11/8-SP 8GB
SK Hynix HMT41GR7AFR8A-PB 8GB
Nanya Technology M2F4G64CB8HG4N-DI 4GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Samsung M471A5244CB0-CWE 4GB
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16G
SK Hynix HMT41GS6AFR8A-PB 8GB
Mushkin MR[A/B]4U300JJJM8G 8GB
Samsung M378B5773DH0-CH9 2GB
Kingston 9905625-096.A00G 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Wilk Elektronik S.A. GR2666D464L19/16GN 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
Samsung V-GeN D4S8GL30A8TX5 8GB
Samsung M378T5663QZ3-CF7 2GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
Kingston 9905403-444.A00LF 4GB
Kingston CBD32D4S2D8HD-16 16GB
Micron Technology 36KSF2G72PZ-1G6N1 16GB
Kingston 9965589-035.D00G 16GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-2400C15-8GNS 8GB
Report a bug
×
Bug description
Source link