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Nanya Technology M2X4G64CB88CHN-DG 4GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
Compare
Nanya Technology M2X4G64CB88CHN-DG 4GB vs Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
Overall score
Nanya Technology M2X4G64CB88CHN-DG 4GB
Overall score
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology M2X4G64CB88CHN-DG 4GB
Report a bug
Reasons to consider
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
Report a bug
Below the latency in the PassMark tests, ns
14
27
Around -93% lower latency
Faster reading speed, GB/s
26.4
12.8
Average value in the tests
Faster write speed, GB/s
19.8
8.0
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology M2X4G64CB88CHN-DG 4GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
14
Read speed, GB/s
12.8
26.4
Write speed, GB/s
8.0
19.8
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2083
4362
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2
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