RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Compare
Nanya Technology NT4GC72B4NA1NL-CG 4GB vs Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Overall score
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Overall score
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Report a bug
Below the latency in the PassMark tests, ns
42
59
Around 29% lower latency
Reasons to consider
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Report a bug
Faster reading speed, GB/s
17.2
10.6
Average value in the tests
Faster write speed, GB/s
9.7
7.8
Average value in the tests
Higher memory bandwidth, mbps
25600
10600
Around 2.42 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
42
59
Read speed, GB/s
10.6
17.2
Write speed, GB/s
7.8
9.7
Memory bandwidth, mbps
10600
25600
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2150
2181
Nanya Technology NT4GC72B4NA1NL-CG 4GB RAM comparisons
Elpida EBJ41EF8BCFA-DJ-F 4GB
Samsung M378A2K43BB1-CPB 16GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT16G4SFD8266.C16FJ 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8G
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4S240FSD.M8FADM 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Ramaxel Technology RMUA5110MB78HAF2400 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CM4X4GF2133C15S2 4GB
Kingston KVR800D2N6/2G 2GB
Kingston K000MD44U 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLM8G44C19U4BL.M8FE1 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) 2800 C16 Series 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT16G4SFD8266.16FE1 16GB
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-2400C17-4GVR 4GB
Crucial Technology CT25664AA800.M16FG 2GB
Chun Well Technology Holding Limited D4U0832160B 8GB
Patriot Memory (PDP Systems) PSD416G320081 16GB
Apacer Technology 76.D105G.D090B 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS8G4D32AESCK.M8FE1 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) 3000 C16 Series 4GB
‹
›
Report a bug
×
Bug description
Source link