RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT512T64U88B0BY-3C 512MB
Micron Technology 8ATF1G64AZ-2G3A1 8GB
Compare
Nanya Technology NT512T64U88B0BY-3C 512MB vs Micron Technology 8ATF1G64AZ-2G3A1 8GB
Overall score
Nanya Technology NT512T64U88B0BY-3C 512MB
Overall score
Micron Technology 8ATF1G64AZ-2G3A1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT512T64U88B0BY-3C 512MB
Report a bug
Faster reading speed, GB/s
2
14.8
Average value in the tests
Reasons to consider
Micron Technology 8ATF1G64AZ-2G3A1 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
71
Around -184% lower latency
Faster write speed, GB/s
10.6
1,322.6
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT512T64U88B0BY-3C 512MB
Micron Technology 8ATF1G64AZ-2G3A1 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
71
25
Read speed, GB/s
2,831.6
14.8
Write speed, GB/s
1,322.6
10.6
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
399
2695
Nanya Technology NT512T64U88B0BY-3C 512MB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB
Micron Technology 8ATF1G64AZ-2G3A1 8GB RAM comparisons
Kingston HP32D4U8S8HC-8XR 8GB
SpecTek Incorporated ?????????????????? 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology NT512T64U88B0BY-3C 512MB
Micron Technology 8ATF1G64AZ-2G3A1 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston XRGM6C-MIE 16GB
A-DATA Technology VDQVE1B16 2GB
Micron Technology 8ATF1G64HZ-2G6E3 8GB
Samsung M393B5270CH0-CH9 4GB
Samsung SH5724G4UNC26P2-SC 32GB
Samsung M471B5773EB0-CK0 2GB
Apacer Technology 78.BAGMD.AF20B 4GB
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F4-4400C16-8GVK 8GB
Kingston KVR533D2N4 512MB
Apacer Technology 78.CAGP7.AZC0B 8GB
Kingston 9905403-011.A03LF 2GB
Micron Technology 16GB 2133MHz DIMM 16GB
SK Hynix HYMP112S64CP6-S6 1GB
Kingston HP37D4U1S8ME-16XR 16GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
G Skill Intl F4-4600C19-8GTZSWC 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BLS16G4D26BFSC.16FD 16GB
Kingston 99U5474-010.A00LF 2GB
G Skill Intl F4-3600C19-8GVRB 8GB
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M378A2K43BB1-CRC 16GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Micron Technology 16ATF2G64HZ-2G1B1 16GB
Report a bug
×
Bug description
Source link