RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
PNY Electronics PNY 2GB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Compare
PNY Electronics PNY 2GB vs Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Overall score
PNY Electronics PNY 2GB
Overall score
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
PNY Electronics PNY 2GB
Report a bug
Below the latency in the PassMark tests, ns
27
63
Around 57% lower latency
Faster write speed, GB/s
8.4
8.2
Average value in the tests
Reasons to consider
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Report a bug
Faster reading speed, GB/s
16.6
13.8
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
PNY Electronics PNY 2GB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
63
Read speed, GB/s
13.8
16.6
Write speed, GB/s
8.4
8.2
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2274
1863
PNY Electronics PNY 2GB RAM comparisons
Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SK Hynix HMA81GU6DJR8N-WM 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BL16G32C16U4W.M8FB1 16GB
TwinMOS 9DNPBNZB-TATP 4GB
Corsair CMD16GX4M2B3200C14 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3000C14-8GTZR 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
SK Hynix HMA81GU6DJR8N-VK 8GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology CT16G4DFRA32A.C16FP 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
G Skill Intl F4-3200C14-32GTRS 32GB
Samsung M3 78T3354BZ0-CCC 256MB
EXCELERAM D4168G8HHSS9CJRB21 16GB
SK Hynix HMT325U6CFR8C-PB 2GB
Corsair CMD64GX4M4C3200C16 16GB
SK Hynix HMA81GS6AFR8N-VK 8GB
Crucial Technology CT8G4SFS824A.C8FAD1 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
SK Hynix HMA81GS6CJRJR-VK 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Samsung M471A2K43EB1-CWE 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CM4B8G1J2400A16K2-ON 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3200C15-16GTZR 16GB
Report a bug
×
Bug description
Source link