RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
PNY Electronics PNY 2GB
G Skill Intl F4-3300C16-8GTZ 8GB
Compare
PNY Electronics PNY 2GB vs G Skill Intl F4-3300C16-8GTZ 8GB
Overall score
PNY Electronics PNY 2GB
Overall score
G Skill Intl F4-3300C16-8GTZ 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
PNY Electronics PNY 2GB
Report a bug
Below the latency in the PassMark tests, ns
27
37
Around 27% lower latency
Faster reading speed, GB/s
13.8
13.6
Average value in the tests
Reasons to consider
G Skill Intl F4-3300C16-8GTZ 8GB
Report a bug
Faster write speed, GB/s
11.4
8.4
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
PNY Electronics PNY 2GB
G Skill Intl F4-3300C16-8GTZ 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
37
Read speed, GB/s
13.8
13.6
Write speed, GB/s
8.4
11.4
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2274
3001
PNY Electronics PNY 2GB RAM comparisons
Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
G Skill Intl F4-3300C16-8GTZ 8GB RAM comparisons
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B1G73DB0-YK0 8GB
Crucial Technology CT8G4SFS832A.C8FP 8GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingston CAC24D4S7D8MB-16 16GB
PNY Electronics PNY 2GB
G Skill Intl F4-3300C16-8GTZ 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Samsung M386A2G40DB0-CPB 16GB
Corsair CMZ16GX3M2A2400C10 8GB
Kingston 9965669-005.A01G 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Samsung M474A2K43BB1-CRC 16GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
V-Color Technology Inc. TL8G36818C-I2PSAAS 8GB
A-DATA Technology AD73I1C1674EV 4GB
Kingston 9905663-016.A00G 16GB
Samsung M471B5173DB0-YK0 4GB
Samsung M391A1G43EB1-CRC 8GB
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMD32GX4M4B3733C17 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-3800C14-16GTZN 16GB
Samsung M393B1G70BH0-YK0 8GB
G Skill Intl F4-3200C16-16GSXWB 16GB
Kingston 99U5471-012.A00LF 4GB
Corsair CMK32GX4M2A2666C16 16GB
TwinMOS 8DHE3MN8-HATP 2GB
SanMax Technologies Inc. SMD-8G28HP-21P 8GB
Report a bug
×
Bug description
Source link