RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
PNY Electronics PNY 2GB
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
Compare
PNY Electronics PNY 2GB vs Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
Overall score
PNY Electronics PNY 2GB
Overall score
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
PNY Electronics PNY 2GB
Report a bug
Below the latency in the PassMark tests, ns
27
77
Around 65% lower latency
Faster reading speed, GB/s
13.8
13.1
Average value in the tests
Faster write speed, GB/s
8.4
5.5
Average value in the tests
Reasons to consider
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
Report a bug
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
PNY Electronics PNY 2GB
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
77
Read speed, GB/s
13.8
13.1
Write speed, GB/s
8.4
5.5
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2274
1440
PNY Electronics PNY 2GB RAM comparisons
Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB RAM comparisons
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905458-017.A01LF 4GB
Kingston 9905625-139.A00G 16GB
Kingston KHX2666C16S4/32G 32GB
Kingston KHX2666C16S4/32G 32GB
TwinMOS 9DCTCO4E-TATP 8GB
G Skill Intl F4-4400C19-32GTRS 32GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Mushkin MRA4S320GJJM16G 16GB
A-DATA Technology VDQVE1B16 2GB
AMD R9S48G3206U2S 8GB
Kingston 9905403-011.A03LF 2GB
Apacer Technology 78.D1GMM.AU10B 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Kingston KHX2666C16D4/16GX 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-2666C15-4GVK 4GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingston XK2M26-MIE-NX 16GB
Hexon Technology Pte Ltd HEXON 1GB
Ramaxel Technology RMSA3260MH78HAF-2666 8GB
Samsung M391B5673EH1-CH9 2GB
InnoDisk Corporation M4SI-BGS2OC0K-A 32GB
Apacer Technology 78.01G86.9H50C 1GB
Ramaxel Technology RMSA3270MB86H9F2400 4GB
Samsung M391B5273CH0-CH9 4GB
G Skill Intl F4-3733C17-16GTZKK 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD32G133381 2GB
Report a bug
×
Bug description
Source link