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PNY Electronics PNY 2GB
Mushkin MRA4S300GJJM16G 16GB

PNY Electronics PNY 2GB vs Mushkin MRA4S300GJJM16G 16GB

Overall score
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Overall score
star star star star star
Mushkin MRA4S300GJJM16G 16GB

Mushkin MRA4S300GJJM16G 16GB

Differences Specifications Comments

Differences

PNY Electronics PNY 2GB Reasons to consider
PNY Electronics PNY 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    27 left arrow 78
    Around 65% lower latency
  • Faster reading speed, GB/s
    13.8 left arrow 12.1
    Average value in the tests
Mushkin MRA4S300GJJM16G 16GB Reasons to consider
Mushkin MRA4S300GJJM16G 16GB
Report a bug
  • Faster write speed, GB/s
    10.3 left arrow 8.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 10600
    Around 1.81 higher bandwidth

Specifications

Complete list of technical specifications
PNY Electronics PNY 2GB
Mushkin MRA4S300GJJM16G 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    27 left arrow 78
  • Read speed, GB/s
    13.8 left arrow 12.1
  • Write speed, GB/s
    8.4 left arrow 10.3
  • Memory bandwidth, mbps
    10600 left arrow 19200
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2274 left arrow 2113

PNY Electronics PNY 2GB RAM comparisons

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

Mushkin MRA4S300GJJM16G 16GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M395T2863QZ4-CF76 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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