PNY Electronics PNY 2GB vs Mushkin MRA4S300GJJM16G 16GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Mushkin MRA4S300GJJM16G 16GB

Mushkin MRA4S300GJJM16G 16GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 78

左右 65% 更低的延时
更快的读取速度，GB/s

13.8 12.1

测试中的平均数值

Mushkin MRA4S300GJJM16G 16GB

需要考虑的原因
Mushkin MRA4S300GJJM16G 16GB

报告一个错误

更快的写入速度，GB/s

10.3 8.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Mushkin MRA4S300GJJM16G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 78
读取速度，GB/s

13.8 12.1
写入速度，GB/s

8.4 10.3
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2274 2113

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Corsair CM4X16GE2666C16K2 16GB

Kingston KF556C40-16 16GB

Kingston KF556C40-16 16GB

A-DATA Technology AX4S2800316G18-B 16GB

A-DATA Technology AX4S2800316G18-B 16GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

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A-DATA Technology DQVE1908 512MB

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Micron Technology 16ATF1G64HZ-2G1B1 8GB