RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
PNY Electronics PNY 2GB
Panram International Corporation PUD42400C154GNJW 4GB
Compare
PNY Electronics PNY 2GB vs Panram International Corporation PUD42400C154GNJW 4GB
Overall score
PNY Electronics PNY 2GB
Overall score
Panram International Corporation PUD42400C154GNJW 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
PNY Electronics PNY 2GB
Report a bug
Faster reading speed, GB/s
13.8
13.7
Average value in the tests
Reasons to consider
Panram International Corporation PUD42400C154GNJW 4GB
Report a bug
Faster write speed, GB/s
8.7
8.4
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
PNY Electronics PNY 2GB
Panram International Corporation PUD42400C154GNJW 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
27
Read speed, GB/s
13.8
13.7
Write speed, GB/s
8.4
8.7
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2274
2193
PNY Electronics PNY 2GB RAM comparisons
Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
Panram International Corporation PUD42400C154GNJW 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B2G70BH0-CK0 16GB
Transcend Information TS512MSH64V1H 4GB
Samsung M393B5170FH0-CK0 4GB
Samsung M378A2K43CB1-CTD 16GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Kingston 9965600-023.A00G 16GB
Kingston 2GB-DDR2 800Mhz 2GB
Crucial Technology CT8G4DFS824A.M8FB 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2800C15-8GTZB 8GB
Crucial Technology CT51264BA1339.C16F 4GB
A-DATA Technology AM2P26KC8T1-BXRS 8GB
Samsung M471B5273CH0-CH9 4GB
Corsair CMD16GX4M2A2400C14 8GB
Kingston ACR512X64D3S13C9G 4GB
Crucial Technology BL8G26C16U4B.8FE 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
Golden Empire CL14-16-16 D4-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3200C16-16GTZN 16GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology CT16G4SFD824A.C16FHD 16GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Crucial Technology CT8G4DFD8213.C16FAR1 8GB
Kingston KVR800D2N6/2G 2GB
Crucial Technology BLS4G4D26BFSC.8FE 4GB
AMD R538G1601U2S 8GB
Transcend Information JM3200HLB-16GK 8GB
Report a bug
×
Bug description
Source link