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PNY Electronics PNY 2GB
Patriot Memory (PDP Systems) PSD48G21332 8GB
Compare
PNY Electronics PNY 2GB vs Patriot Memory (PDP Systems) PSD48G21332 8GB
Overall score
PNY Electronics PNY 2GB
Overall score
Patriot Memory (PDP Systems) PSD48G21332 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
PNY Electronics PNY 2GB
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Faster reading speed, GB/s
13.8
13.3
Average value in the tests
Reasons to consider
Patriot Memory (PDP Systems) PSD48G21332 8GB
Report a bug
Faster write speed, GB/s
9.8
8.4
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
PNY Electronics PNY 2GB
Patriot Memory (PDP Systems) PSD48G21332 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
27
Read speed, GB/s
13.8
13.3
Write speed, GB/s
8.4
9.8
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2274
2439
PNY Electronics PNY 2GB RAM comparisons
Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
Patriot Memory (PDP Systems) PSD48G21332 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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Latest comparisons
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PNY Electronics PNY 2GB
Patriot Memory (PDP Systems) PSD48G21332 8GB
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Kingston 9905403-011.A03LF 2GB
G Skill Intl F4-2400C15-8GFT 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Corsair CMD16GX4M4A2800C16 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Chun Well Technology Holding Limited MD4U1632161DCW 16G
Kingston 9905471-071.A00LF 8GB
Samsung M471A5244CB0-CRC 4GB
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Samsung M4 70T5663CZ3-CE6 2GB
Samsung M471A5244CB0-CWE 4GB
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